Modification of thin film properties by ion bombardment during deposition

Abstract

The modification of thin film properties by ion bombardment during deposition is reviewed, with the emphasis on broad-beam ion source techniques. Examples of property modification are given, including intrinsic stress modification, step coverage improvement, changes in preferred orientation, improved surface coverage, magnetic anisotropy control, improved epitaxy, crystal structure changes, modification of refractive index and optical transmission, and porosity reduction. The examples are displayed on a universal plot of the ion/atom arrival rate ratio vs the ion energy needed for property modification. The zone of ion bombardment parameters which causes these property changes spans a range of energy input from about 1 eV per depositing atom to several hundred eV per atom. © 1985.