C. Cabral Jr., L. Clevenger, et al.
MRS Fall Meeting 1996
We report the growth of n-type modulation-doped Si/SiGe with the doped SiGe supply layer underneath the strained Si channel. The mobility and charge density are measured in samples with 2- and 3-nm-thick spacers using gated Hall measurements. A peak room temperature mobility of 2200 cm2/V s is measured at a sheet density of 2.5×1012 cm-2. The measurements indicate a clear mobility modulation especially near threshold. Our layer design allows the gate to induce a sheet charge density of up to 3.2×1012 cm-2, before any significant reduction in the mobility is observed.
C. Cabral Jr., L. Clevenger, et al.
MRS Fall Meeting 1996
R.G. Clark, R.B. Dunford, et al.
Physica B: Condensed Matter
M. Arafa, P. Fay, et al.
IEEE Electron Device Letters
S.J. Koester, B.-U. Klepser, et al.
DRC 1998