J.A. Barker, D. Henderson, et al.
Molecular Physics
A field effect transistor device (FET), consisting of a nonlinear Mott Insulator channel material, and a high dielectric-constant gate oxide, is explored as a nanoscale device. Experimental functionality of a large scale prototype (5 μm channel length) has been demonstrated. The underlying physics of the device is analyzed and modeled using a time-dependent Hartree approach. Timing estimates suggest a relatively short switching time.
J.A. Barker, D. Henderson, et al.
Molecular Physics
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
H.D. Dulman, R.H. Pantell, et al.
Physical Review B