K.A. Chao
Physical Review B
A field effect transistor device (FET), consisting of a nonlinear Mott Insulator channel material, and a high dielectric-constant gate oxide, is explored as a nanoscale device. Experimental functionality of a large scale prototype (5 μm channel length) has been demonstrated. The underlying physics of the device is analyzed and modeled using a time-dependent Hartree approach. Timing estimates suggest a relatively short switching time.
K.A. Chao
Physical Review B
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
E. Burstein
Ferroelectrics
Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011