Dominik Metzler, Kishore Uppireddi, et al.
JVSTA
We use ultrahigh vacuum chemical vapor deposition to grow polycrystalline silicon carbide (SiC) on c-plane sapphire wafers, which are then annealed between 1250 and 1450°C in vacuum to create epitaxial multilayer graphene (MLG). Despite the surface roughness and small domain size of the polycrystalline SiC, a conformal MLG film is formed. By planarizing the SiC prior to graphene growth, a reduction in the Raman defect band is observed in the final MLG. The graphene formed on polished SiC films also demonstrates significantly more ordered layer-by-layer growth and increased carrier mobility for the same carrier density as the nonpolished samples. © 2011 American Institute of Physics.
Dominik Metzler, Kishore Uppireddi, et al.
JVSTA
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ISTFA 2016
Yanqing Wu, Yu-Ming Lin, et al.
Nature
W. Chien, Huai-Yu Cheng, et al.
IEDM 2016