J.N. Burghartz, J. Wamock, et al.
ESSDERC 1992
Multilevel monolithic inductors implemented in a standard BiCMOS technology are presented. Use of top metal layers shunted with vias provides Q values approaching 10 at 2.4GHz and above 6 at 900MHz for a 2nH inductor. There is no modification to the conventional wiring metallurgy and no need for extra processing steps. © 1995, IEE. All rights reserved.
J.N. Burghartz, J. Wamock, et al.
ESSDERC 1992
J. Cai, K. Rim, et al.
IEDM 2004
M. Soyuer, J.N. Burghartz, et al.
ISCAS 1996
S.V. Kosonocky, A.A. Bright, et al.
VTS 1998