PaperStress-relieved regrowth of silicon on sapphire by laser annealingG.A. Sai-Halasz, F. Fang, et al.Applied Physics Letters
PaperEffects of higher sub-band occupation in (100) Si inversion layersW.E. Howard, F. FangPhysical Review B
PaperNonlinear behavior of magnetoconductance in two-dimensional electron gasF. Fang, B.B. GoldbergSurface Science
PaperQuantized magnetoresistance in multiply connected perimeters in two-dimensional systemsF. Fang, P.J. StilesPhysical Review B
