J.R. Thompson, Yang Ren Sun, et al.
Physica A: Statistical Mechanics and its Applications
A method which for the first time can treat two truly semi-infinite semiconductors in contact is introduced and used to study the electronic structure of the two polar (100) Ge-GaAs interfaces. Both the Ge-Ga and the Ge-As interfaces exhibit essentially three interface bands. The nature and origins of these bands are discussed in detail in terms of local densities of states. The results are used to obtain a new interpretation of the experimental data in terms of a stoichiometrically mixed interface. © 1979.
J.R. Thompson, Yang Ren Sun, et al.
Physica A: Statistical Mechanics and its Applications
T. Schneider, E. Stoll
Physical Review B
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
Kenneth R. Carter, Robert D. Miller, et al.
Macromolecules