Conference paper
Learning Reduced Order Dynamics via Geometric Representations
Imran Nasim, Melanie Weber
SCML 2024
A method which for the first time can treat two truly semi-infinite semiconductors in contact is introduced and used to study the electronic structure of the two polar (100) Ge-GaAs interfaces. Both the Ge-Ga and the Ge-As interfaces exhibit essentially three interface bands. The nature and origins of these bands are discussed in detail in terms of local densities of states. The results are used to obtain a new interpretation of the experimental data in terms of a stoichiometrically mixed interface. © 1979.
Imran Nasim, Melanie Weber
SCML 2024
Robert W. Keyes
Physical Review B
Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011
U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures