New spin-on oxycarbosilane low-k dielectric materials with exceptional mechanical properties

Abstract

Bridged oxycarbosilane monomers are excellent precursors for the formation of spin on porous low-k materials using sacrificial pore generators. The measured Young's modulus numbers for the as-synthesized thin films without any post porosity toughening are the highest by far of any that we have observed for porous films generated using the sacrificial porogen route. For a given dielectric constant, the Young's modulus of these oxycarbosilane films are 4-5 times higher than available organbsilicates and at least 2 times higher than UV treated organosilicate materials.