S.M. Faris
IEEE Circuits and Systems Magazine
The time-averaged current induced by incident radiation across electronic tunneling junctions is shown experimentally and theoretically to have a highly nonlinear dependence on the field intensity for a range of tunneling barrier thickness.
S.M. Faris
IEEE Circuits and Systems Magazine
S. Washburn, R.A. Webb, et al.
Physical Review Letters
P.A. Moskowitz, S.M. Faris, et al.
IEEE Transactions on Magnetics
S.M. Faris, E.A. Valsamakis
Journal of Applied Physics