B.J. Spencer, P.W. Voorhees, et al.
Applied Physics Letters
We use cross-sectional scanning tunneling microscopy to examine the shape and composition distribution of In0.5Ga0.5As quantum dots (QDs) formed by capping heteroepitaxial islands. The QDs have a truncated pyramid shape. The composition appears highly nonuniform, with an In-rich core having an inverted-triangle shape. Thus the electronic properties will be drastically altered, relative to the uniform composition generally assumed in device modeling. Theoretical analysis of the QD growth suggests a simple explanation for the unexpected shape of the In-rich core. © 2000 The American Physical Society.
B.J. Spencer, P.W. Voorhees, et al.
Applied Physics Letters
P. Venezuela, J. Tersoff, et al.
Nature
G. Katsaros, A. Rastelli, et al.
Applied Physics Letters
S. Kodambaka, J. Tersoff, et al.
SPIE OPTO 2009