Subramanian S. Iyer, K. Eberl, et al.
Applied Physics Letters
Strained layers generally relax by dislocation glide. Here, using UHV-TEM, we study growth of Ge islands on Si(001) at ≲350°C. We find that, although conventional relaxation (i.e., via glide of 60°dislocations) is suppressed, the islands grow relaxed from the outset, by direct incorporation of sessile 90°dislocations into the edge of the growing island. Paradoxically, the low-temperature islands are more fully relaxed than those grown at higher temperature.© 1995 American Institute of Physics.
Subramanian S. Iyer, K. Eberl, et al.
Applied Physics Letters
J. Tersoff
Physical Review B
J. Tersoff, B.J. Spencer, et al.
Physical Review Letters
J. Tersoff, D.E. Jesson, et al.
Science