F. Legoues, B.S. Meyerson, et al.
Physical Review Letters
Strained layers generally relax by dislocation glide. Here, using UHV-TEM, we study growth of Ge islands on Si(001) at ≲350°C. We find that, although conventional relaxation (i.e., via glide of 60°dislocations) is suppressed, the islands grow relaxed from the outset, by direct incorporation of sessile 90°dislocations into the edge of the growing island. Paradoxically, the low-temperature islands are more fully relaxed than those grown at higher temperature.© 1995 American Institute of Physics.
F. Legoues, B.S. Meyerson, et al.
Physical Review Letters
J. Tersoff
Physical Review Letters
M. Horn-Von Hoegen, F. Legoues, et al.
Physical Review Letters
F.M. Ross, P.A. Bennett, et al.
Micron