B.A. Scott, M.H. Brodsky, et al.
Applied Physics Letters
It is suggested that resonant tunneling via defect-related states is an important mechanism for high-field carrier injection into thin SiO2 films of metal-oxide-semiconductor structures. A model is also proposed for high-field insulator breakdown which cannot be explained by available theories. © 1983 The American Physical Society.
B.A. Scott, M.H. Brodsky, et al.
Applied Physics Letters
M.Ya. Azbel, D.P. DiVincenzo
Solid State Communications
D.P. DiVincenzo, R. Mosseri, et al.
Physical Review B
M.H. Brodsky, P.J. Stiles
Physical Review Letters