P.A. Bennett, B. Ashcroft, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
We have investigated the effect of H passivation on the deposition of Co on Si(111). The H terminated surface has fewer nucleation sites for silicide formation than either the bare (7×7) surface or the boron (3×3)R30°. This leads to a growth mode dominated by the formation of sparse nonepitaxial islands, which grow laterally to merge. The H passivated (1×1) surface does not contain Si adatoms, unlike the (7×7) and boron (3×3)R30°surfaces, which must be the nucleation site for cobalt silicide formation on Si(111). © 1994 American Institute of Physics.
P.A. Bennett, B. Ashcroft, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
S. Tanaka, N.C. Bartelt, et al.
Physical Review Letters
J. Tersoff, A.W. Denier Van Der Gon, et al.
Physical Review Letters
R.M. Tromp, James B. Hannon, et al.
Ultramicroscopy