J.K. Gimzewski, T.A. Jung, et al.
Surface Science
The current-voltage characteristics of Ga1-xAlxAs-GaAs-Ga1-xAlx As double-barrier devices show, in addition to resonant tunneling via quasibound states, well-defined structures corresponding to energies higher than the barrier height. These new features are interpreted as resonant tunneling through confined states in Ga1-xAlxAs, at the X point of the Brillouin zone. © 1986 The American Physical Society.
J.K. Gimzewski, T.A. Jung, et al.
Surface Science
J.H. Kaufman, Owen R. Melroy, et al.
Synthetic Metals
T.N. Morgan
Semiconductor Science and Technology
Q.R. Huang, Ho-Cheol Kim, et al.
Macromolecules