O.F. Schirmer, K.W. Blazey, et al.
Physical Review B
The current-voltage characteristics of Ga1-xAlxAs-GaAs-Ga1-xAlx As double-barrier devices show, in addition to resonant tunneling via quasibound states, well-defined structures corresponding to energies higher than the barrier height. These new features are interpreted as resonant tunneling through confined states in Ga1-xAlxAs, at the X point of the Brillouin zone. © 1986 The American Physical Society.
O.F. Schirmer, K.W. Blazey, et al.
Physical Review B
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
A. Gangulee, F.M. D'Heurle
Thin Solid Films
B.A. Hutchins, T.N. Rhodin, et al.
Surface Science