Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
We have shown by magnetotunneling spectroscopy that at certain magnetic fields the Landé factor g of two-dimensional electrons is significantly enhanced relative to its three-dimensional value. The experiments were done using GaSbAlSbInAsAlSbGaSb heterostructures, in which a two-dimensional electron gas in the InAs layer is probed by holes from the GaSb electrodes tunneling in and out of it. The field dependence of the g factor is accounted for by the exchange interaction between electrons of the same spin. © 1994.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Surendra B. Anantharaman, Joachim Kohlbrecher, et al.
MRS Fall Meeting 2020
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
Oliver Schilter, Alain Vaucher, et al.
Digital Discovery