High-Transconductance n-Type Si/SiGe Modulation-Doped Field-Effect Transistors
- K. Ismail
- B.S. Meyerson
- et al.
- 1992
- IEEE Electron Device Letters
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13 results for J.J. Nocera
Selective Wet and Dry Etching of Hydrogenated Amorphous Silicon and Related Materials
- I. Haller
- Y.H. Lee
- et al.
- 2019
- JES
Observation by spin-resolved resonant magnetotunneling of oscillatory Landé factor in two-dimensional electron systems
- E. Mendez
- J.J. Nocera
- et al.
- 1994
- Solid State Electronics
Systematics of electron mobility in Si/SiGe heterostructures
- S. Nelson
- K. Ismail
- et al.
- 1993
- Applied Physics Letters
Electrical and physical properties of high-Ge-content Si/SiGe p-type quantum wells
- R.A. Kiehl
- P.E. Batson
- et al.
- 1993
- Physical Review B
Oscillatory Landé factor of two-dimensional electrons under high magnetic fields
- E. Mendez
- J.J. Nocera
- et al.
- 1993
- Physical Review B
Two-dimensional hole gas in Si/SiGe heterostructures
- F. Fang
- P.J. Wang
- et al.
- 1992
- Surface Science
Conservation of momentum, and its consequences, in interband resonant tunneling
- E. Mendez
- J.J. Nocera
- et al.
- 1992
- Physical Review B
Effect of strain in Si/SiGe modulation-doped quantum wells
- K. Ismail
- B.S. Meyerson
- et al.
- 1992
- Surface Science
Observation of the fractional quantum Hall effect in Si/SiGe heterostructures
- S. Nelson
- K. Ismail
- et al.
- 1992
- Applied Physics Letters