S. Washburn, R.J. Haug, et al.
Physical Review B
We have fabricated quantum devices from remotely doped Si/SiGe heterostructures. The devices are interferometers (loops) similar in plan to those used in experiments on ballistic GaAs/AlxGa1-xAs devices. The loops are approximately 2r=0.8 μm in diameter with linewidths of w=0.4 μm. We have observed clear Aharonov-Bohm (AB) oscillations that vanish systematically as the carrier temperature increases. Response of up to the second harmonic of the fundamental AB frequency e/h implies a phase coherence length of around L=1.2 μm. In some samples, we see steps in conductance G(Vg) as a function of gate voltage similar to the ballistic mode steps seen in GaAs/AlxGa1-xAs point contacts. © 1994 American Institute of Physics.
S. Washburn, R.J. Haug, et al.
Physical Review B
R.G. Clark, R.B. Dunford, et al.
Physica B: Condensed Matter
Y. Hsu, T. Standaert, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
K.Y. Lee, T.P. Smith III, et al.
Applied Physics Letters