Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
We have observed a distinct inverse magnetoresistance in a hybrid tunnel junction. Two types of perovskite oxides, La0.67Sr 0.33MnO3 and SrRuO3, were used as ferromagnetic electrodes with an SrTiO3 barrier in between them. Micron-scale junctions were fabricated from 90° off-axis sputtered trilayers, using standard optical lithography. Homo-junctions that incorporate either La0.67Sr0.33MnO3 or SrRuO3 as both electrodes showed only normal positive magnetoresistances. In contrast, a clear inverse magnetic switching was found at 10 K for the hybrid junction. The spin polarization of SrRuO3 is about -9% as calculated based upon Julliere model, which is in quantitative agreement with the value (-10%) determined by the earlier tunneling experiment on SrRuO3/SrTiO 3/Al structures. This is not only the manifestation of the existence of a negatively polarized material at the Fermi level, but also demonstrates that the widely-cited Julliere model is applicable even to a negative polarization case. © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Ronald Troutman
Synthetic Metals
Fernando Marianno, Wang Zhou, et al.
INFORMS 2021
Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology