William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
The effect of bonded hydrogen in the atomic microstructure of nitrogen-rich SiNx films is investigated using EXAFS. It is shown that when the hydrogen concentration is of the order of 30 at%, the measured NSi bond length is shorter than that in the reference nitride by 2-3% and the coordination number in the 1st neighbor shell is significantly lower than the expected value of 3. Furthermore, evidence is provided on the coexistence of an a-Si phase, the concentration of which depends on the deposition conditions. © 1995.
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
J.K. Gimzewski, T.A. Jung, et al.
Surface Science
B.A. Hutchins, T.N. Rhodin, et al.
Surface Science