Michiel Sprik
Journal of Physics Condensed Matter
The effects of MeV phosphorus implantation and subsequent process steps on the electrical characteristics of p-channel field-effect transistors (FET), Schottky barrier diodes and p-n junctions were studied. The observed I-V characteristics can be explained in terms of spatially localized defects induced by the high-energy implantation and correlate well with the results using Monte Carlo simulation and C-V profiling techniques. © 1986.
Michiel Sprik
Journal of Physics Condensed Matter
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983