U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures
The effects of MeV phosphorus implantation and subsequent process steps on the electrical characteristics of p-channel field-effect transistors (FET), Schottky barrier diodes and p-n junctions were studied. The observed I-V characteristics can be explained in terms of spatially localized defects induced by the high-energy implantation and correlate well with the results using Monte Carlo simulation and C-V profiling techniques. © 1986.
U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures
Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films