X-ray lithography induced radiation effects in deep submicron CMOS devices
- L.K. Wang
- A. Acovic
- et al.
- 1993
- MRS Spring Meeting 1993
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35 results for L.K. Wang
Enhanced performance of accumulation mode 0.5 μ m CMOS/SOI operated at 300 K and 85 K
- L.K. Wang
- J. Seliskar
- et al.
- 1991
- IEDM 1991
Characteristics of CMOS devices fabricated using high quality thin PECVD gate oxide
- L.K. Wang
- D.S. Wen
- et al.
- 1989
- IEDM 1989
0. 5- mu M-CHANNEL CMOS TECHNOLOGY OPTIMIZED FOR LIQUID-NITROGEN-TEMPERATURE OPERATION.
- J.Y.-C. Sun
- Y. Taur
- et al.
- 1985
- IEDM 1985
HIGHLY LATCHUP-IMMUNE 1- mu m CMOS TECHNOLOGY FABRICATED WITH 1 Mev ION IMPLANTATION AND SELF-ALIGNED TiSi//2.
- F.S. Lai
- L.K. Wang
- et al.
- 1984
- IEDM 1984
Random Telegraph Signals in Accumulation-Mode SOI/nMOSFET
- Ming-Horn Tsai
- Tso-Ping Ma
- et al.
- 1994
- IEEE Electron Device Letters
Hot-Electron-Induced Instability in 0.5-μm p-Channel MOSFET’s Patterned Using Synchrotron X-ray Lithography
- C.C.-H. Hsu
- L.K. Wang
- et al.
- 1989
- IEEE Electron Device Letters
Bipolar Transistor with Self-Aligned Lateral Profile
- G.P. Li
- Tze-Chiang Chen
- et al.
- 1987
- IEEE Electron Device Letters
Performance projection and thermal management of high performance VLSI designs
- L.K. Wang
- Howard H. Chen
- et al.
- 2001
- ICSICT 2001
Low power high speed error correction code macro using complementary pass transistor logic circuit
- L.K. Wang
- Howard H. Chen
- 1997
- Annual ASIC Conference and Exhibit 1997