H. Baratte, T.N. Jackson, et al.
Applied Physics Letters
It has been observed that an inversion layer cannot form in a p-type silicon substrate when the Fowler-Nordheim tunneling current into the oxide exceeds the minority generation current in the depletion layer. On the other hand, for n-type substrates, the formation of the inversion layer is unaffected by the oxide current.
H. Baratte, T.N. Jackson, et al.
Applied Physics Letters
G.M. Cohen, M.J. Rooks, et al.
Applied Physics Letters
H.-S. Wong, David J. Franks, et al.
IEDM 1998
P. Solomon
Physica E: Low-Dimensional Systems and Nanostructures