Journal of Applied Physics

Paper

11 Jun 2004

On the Preparation of High Purity Gallium Arsenide [2]

View publication

Abstract

No abstract available.

Related

Paper

High-energy light emission from junctions in GaAs_xP _1-x diodes

Paper

Preparation of 0.5-10³ Ω-cm GaAs by acceptor precipation during heat treatment of oxygen grown crystals

Paper

Electrical and optical properties of vapor-grown GaP

Paper

The growth and some properties of Ga_xIn_1-xSb

View all publications