D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
A generic process for fabricating a vertical surround-gate field-effect transistor (VS-FET) based on epitaxially grown silicon nanowires was discussed. The silicon nanowires used were epitaxially grown by chemical vapor deposition (CVD) on a (111)-oriented p-type silicon substrate. It was found that the bending of the nanowire was probably due to stress during the spin-on-glass coating step and/or the polyimide curing. The results show that the array of VS-FET exhibited a gate-voltage-dependent current increase of more than two orders of magnitude.
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
Oliver Schilter, Alain Vaucher, et al.
Digital Discovery
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME