William G. Van der Sluys, Alfred P. Sattelberger, et al.
Polyhedron
Paper
Optical analysis of wet chemically etched InGaAs/InP wires
Abstract
We have investigated the influence of the sidewall recombination on the photoluminescence intensity of wet etched InGaAs/InP wires. We observe a strong influence of the sidewall recombination for low excitation powers (≈10W/cm2) independent of the particular etchant used. By using an Na2S-passivation layer the nonradiative sidewall recombination can be suppressed completely. © 1992.
Related
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Conference paper
Learning Reduced Order Dynamics via Geometric Representations
Imran Nasim, Melanie Weber
SCML 2024
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992