Michiel Sprik
Journal of Physics Condensed Matter
We have investigated the influence of the sidewall recombination on the photoluminescence intensity of wet etched InGaAs/InP wires. We observe a strong influence of the sidewall recombination for low excitation powers (≈10W/cm2) independent of the particular etchant used. By using an Na2S-passivation layer the nonradiative sidewall recombination can be suppressed completely. © 1992.
Michiel Sprik
Journal of Physics Condensed Matter
Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics