J.V. Harzer, B. Hillebrands, et al.
Journal of Magnetism and Magnetic Materials
We have investigated the influence of the sidewall recombination on the photoluminescence intensity of wet etched InGaAs/InP wires. We observe a strong influence of the sidewall recombination for low excitation powers (≈10W/cm2) independent of the particular etchant used. By using an Na2S-passivation layer the nonradiative sidewall recombination can be suppressed completely. © 1992.
J.V. Harzer, B. Hillebrands, et al.
Journal of Magnetism and Magnetic Materials
Kigook Song, Robert D. Miller, et al.
Macromolecules
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
P. Alnot, D.J. Auerbach, et al.
Surface Science