V. Scagnoli, U. Staub, et al.
Conference on Magnetism (ICM) 2003
Conference paper
Origin of oxygen vacancies in resistive switching memory devices
Abstract
The resistive switching state in Cr-doped SrTiO3 was induced by applying an electric field. This was done in ambient air and in an atmosphere of H2/Ar. The distribution of the thereby introduced oxygen vacancies was studied by spatially resolved X-ray fluorescence images. It was concluded that the oxygen vacancies were introduced in the interface between the SrTiO3 and the positively biased electrode. © 2009 IOP Publishing Ltd.
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