R. Ghez, J.S. Lew
Journal of Crystal Growth
Review
Oxidation properties of GaAs (110) surfaces
Abstract
It is argued that shifts in binding energy of the As 3 d core level and their absence for the corresponding Ga level upon oxidation of the GaAs (110) surface may be interpreted in terms of multiple bonds of oxygen to both As and Ga surface atoms. © 1977 The American Physical Society.
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