M. Dragosavac, D.J. Paul, et al.
ICPS Physics of Semiconductors 2004
Atomic hydrogen is found to simultaneously passivate and depassivate silicon dangling bonds at the Si(111)/SiO2 interface at room temperature via the reactions Pb+H0→PbH and PbH+H0→Pb+H2. The passivation reaction occurs more efficiently keeping the steady-state P b density at a low value of only 3-6×1011 cm -2 during atomic hydrogen exposure. This low Pb density can only account for a small fraction of the total number of interface states produced by atomic hydrogen.
M. Dragosavac, D.J. Paul, et al.
ICPS Physics of Semiconductors 2004
K. Henson, H. Bu, et al.
IEDM 2008
E. Cartier, J.H. Stathis
Applied Physics Letters
J.H. Stathis, B.P. Linder, et al.
Microelectronics Reliability