William G. Van der Sluys, Alfred P. Sattelberger, et al.
Polyhedron
Paper
Patterning of 100 nm features using X-ray lithography
Abstract
Patterning of 100 nm critical dimension features using X-ray proximity lithography is discussed. Lithographic performance is shown using photoresists APEX-E, UV-4 and an experimental formulation of ESCAP photoresist. Conditions to pattern isolated and nested lines at maximum permissible gap is discussed. ©1997TAPJ.