Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
Paper
Patterning of 100 nm features using X-ray lithography
Abstract
Patterning of 100 nm critical dimension features using X-ray proximity lithography is discussed. Lithographic performance is shown using photoresists APEX-E, UV-4 and an experimental formulation of ESCAP photoresist. Conditions to pattern isolated and nested lines at maximum permissible gap is discussed. ©1997TAPJ.
Related
J.K. Gimzewski, T.A. Jung, et al.
Surface Science
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
Sung Ho Kim, Oun-Ho Park, et al.
Small