Performance assessment of scaled strained-Si channel-on-insulator (SSOI) CMOS

Abstract

The performance assessment of scaled strained-silicon channel-on-insulator (SSOI) CMOS was discussed. Bulk-strained-silicon (SS) and unstrained-silicon devices were fabricated. The predicted results of energy dissipation over one switching cycle for the bulk-Si, bulk-SS and SSOI CMOS circuits was compared. The SSOI CMOS was found to exhibit the lowest energy dissipation.