M.R. Melloch, C.L. Chang, et al.
Journal of Crystal Growth
We report on photoemission measurements of molecular-beam-epitaxy-grown GaAs p-i-n structures, in which the optically active insulating GaAs layer contains As precipitates (GaAs). GaAs is formed by low-temperature growth of GaAs at 225°C, followed by an anneal at 600°C. Layers grown in this way have been reported to be sensitive to subband-gap light. The measured barrier height of 0.7 eV, extracted from a well-behaved Fowler plot, indicates that the mechanism for photodetection involves arsenic clusters embedded in GaAs acting as internal Schottky barriers.
M.R. Melloch, C.L. Chang, et al.
Journal of Crystal Growth
J. Woodall, Alan C. Warren, et al.
IEEE T-ED
S. Chang, I.M. Vitomirov, et al.
Physical Review B
C.W. Wilmsen, Alan C. Warren, et al.
JES