Gregory Czap, Kyungju Noh, et al.
APS Global Physics Summit 2025
Defects introduced by reactive-ion etching (RIE) and plasma etching (PE) using deuterium have been studied in boron-doped silicon with the photoluminescence (PL) technique. We have observed a set of broad luminescence bands in the below-bandgap range between 1.05 and 0.8 eV. These bands change in intensity as well as in photon energy with annealing. We attribute all these PL bands to electron-hole recombination in heavily damaged regions, where electrons and holes can be localized in potential wells caused by the strain surrounding the microscopic hydrogen defects. © 1989.
Gregory Czap, Kyungju Noh, et al.
APS Global Physics Summit 2025
Revanth Kodoru, Atanu Saha, et al.
arXiv
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
A. Ney, R. Rajaram, et al.
Journal of Magnetism and Magnetic Materials