Inducing a direct-to-pseudodirect bandgap transition in wurtzite GaAs nanowires with uniaxial stress
- Giorgio Signorello
- Emanuel Lörtscher
- et al.
- 2014
- Nature Communications
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6 results for H. Weman
Comparison of Be-doped GaAs nanowires grown by Au- and Ga-assisted molecular beam epitaxy
- D.L. Dheeraj
- A.M. Munshi
- et al.
- 2013
- Journal of Crystal Growth
Reactive-ion- and plasma-etching-induced extended defects in silicon studied with photoluminescence
- H. Weman
- J.L. Lindström
- et al.
- 1990
- Journal of Applied Physics
Strain-induced quantum confinement of carriers due to extended defects in silicon
- H. Weman
- B. Monemar
- et al.
- 1990
- Physical Review B
Photoluminescence of defects introduced by deuterium plasmas in silicon
- H. Weman
- J.L. Lindström
- et al.
- 1989
- Materials Science and Engineering B
Thermal donors and carbonoxygen defects in silicon
- J.L. Lindström
- H. Weman
- et al.
- 1987
- physica status solidi (a)