Modeling polarization for Hyper-NA lithography tools and masks
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
We have made the first comprehensive measurements of the photovoltaic and photoconductivity effects in polyacetylene in that we have extended the spectral range originally covered by Matsui and Nakamura [17] to include the visible region as well. The photovoltaic experiments were done on Schottky barrier junctions formed between AsF5 lightly-doped p-type trans-(CH)x and a low work function metal, the first junctions of this type to be produced in semiconducting polyacetylene. The observation of a photovoltaic response threshold at 1.48 eV provides the first definitive measurement of the single-particle band gap in trans-(CH)x. In addition, we have found the existence of a peak at 1.35 eV in the photoconductivity spectrum of undoped trans-(CH)x which may be due either to extrinsic sources or to thermal dissociation of a weakly bound Wannier exciton. © 1980.
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
Michiel Sprik
Journal of Physics Condensed Matter
William G. Van der Sluys, Alfred P. Sattelberger, et al.
Polyhedron