Polysiloxanes for deep UV lithography

Abstract

The sensitivity of linear siloxane polymers has been increased in the deep uv by the addition of photoinitiators. The resist system discussed in this paper has a sensitivity of 20mJ/cm2 at 2537A., with a contrast (γ) of 2.6. When used as a thin imaging layer in a double layer system, 0.75um resolution has been achieved on the PE500 exposure tool. Data is presented on exposure linewidth variation, resist stability, and etch rate in an oxygen plasma. © 1985.