Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
The sensitivity of linear siloxane polymers has been increased in the deep uv by the addition of photoinitiators. The resist system discussed in this paper has a sensitivity of 20mJ/cm2 at 2537A., with a contrast (γ) of 2.6. When used as a thin imaging layer in a double layer system, 0.75um resolution has been achieved on the PE500 exposure tool. Data is presented on exposure linewidth variation, resist stability, and etch rate in an oxygen plasma. © 1985.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Hiroshi Ito, Reinhold Schwalm
JES
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
Frank Stem
C R C Critical Reviews in Solid State Sciences