Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
A PtRh resistor has been developed as an integral part of an advanced planarized low-TcJosephson technology that is compatible with Si integrated circuit processing. Electron-beam evaporated from a single source, the PtRh films have a sheet resistance well controlled in the range of 3–20 Ω / square that is independent of temperature from 4.2 K down to at least 10 mK. The contact resistivity between PtRh, with a sheet resistance of 5 Ω / square and Nb interconnects is typically 0.7 Ω ⋅ μm. © 1994 IEEE
Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
R. Ghez, J.S. Lew
Journal of Crystal Growth
Thomas E. Karis, C. Mark Seymour, et al.
Rheologica Acta
Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011