R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids
We imaged nanoscale lattice strain in a multilayer semiconductor device prototype with a new X-ray technique, nanofocused Bragg projection ptychography. Applying this technique to the epitaxial stressor layer of a SiGe-on-SOI structure, we measured the internal lattice behavior in a targeted region of a single device and demonstrated that its internal strain profile consisted of two competing lattice distortions. These results provide the strongest nondestructive test to date of continuum modeling predictions of nanoscale strain distributions. © 2012 American Chemical Society.
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids
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Surface Science
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SPIE Advanced Lithography 2007
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