22nm High-performance SOI technology featuring dual-embedded stressors, Epi-Plate High-K deep-trench embedded DRAM and self-aligned Via 15LM BEOL
- S. Narasimha
- P. Chang
- et al.
- 2012
- IEDM 2012
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30 results for Judson R. Holt
High-performance nMOSFET with in-situ phosphorus-doped embedded Si:C (ISPD eSi:C) source-drain stressor
- B. Yang
- R. Takalkar
- et al.
- 2008
- IEDM 2008
(110) Channel, SiON gate-dielectric PMOS with record high Ion=1 mA/μm through channel stress and source drain external resistance (R ext) engineering
- B. Yang
- A. Waite
- et al.
- 2007
- IEDM 2007
High performance 45-nm SOI technology with enhanced strain, porous low-k BEOL, and immersion lithography
- S. Narasimha
- K. Onishi
- et al.
- 2006
- IEDM 2006
Novel enhanced stressor with graded embedded SiGe source/drain for high performance CMOS devices
- J.-P. Han
- H. Utomo
- et al.
- 2006
- IEDM 2006
Systematic characterization of pseudomorphic (110) intrinsic SiGe epitaxial films for hybrid orientation technology with embedded SiGe source/drain
- Qiqing Ouyang
- Anita Madan
- et al.
- 2006
- MRS Spring Meeting 2006
Integration and optimization of embedded-SiGe, compressive and tensile stressed liner films, and stress memorization in advanced SOI CMOS technologies
- M. Horstmann
- A. Wei
- et al.
- 2005
- IEDM 2005
Selective epitaxial channel ground plane thin SOI CMOS devices
- Zhibin Ren
- M. Ieong
- et al.
- 2005
- IEDM 2005
Design of high performance PFETs with strained Si channel and laser anneal
- Z. Luo
- Y.F. Chong
- et al.
- 2005
- IEDM 2005
High performance 65 nm SOI technology with enhanced transistor strain and advanced-low-K BEOL
- W.-H. Lee
- A. Waite
- et al.
- 2005
- IEDM 2005