Conference paper
LPCVD TUNGSTEN SILICIDE WITH TITANIUM UNDERLAYER.
R.V. Joshi, L. Krusin-Elbaum, et al.
VLSI Technology 1985
The regime of rapid thermal activation is addressed in prototype Bi2Sr2CaCu2Ox/Ag tapes containing splayed columnar defects. Although the thermally-activated decay of current diminishes greatly, significant rates of temperature-independent current decay remain due to quantum tunneling of vortices between strong pinning centers. The quantum process dominates the vortex dynamics up to 10 K or more and considerably limits long term current transport in the sample materials.
R.V. Joshi, L. Krusin-Elbaum, et al.
VLSI Technology 1985
L. Krusin-Elbaum, K.Y. Ahn, et al.
JVSTA
L. Civale, L. Krusin-Elbaum, et al.
Physical Review B
L. Krusin-Elbaum
JES