Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
Self-consistent solutions for quasi-one-dimensional electron states in a narrow inversion layer channel at a GaAs/AlGaAs heterointerface have been obtained for a structure with a split gate. A simple model for fixed charge at the exposed surface in the gate opening has been used in the calculation. Energy levels for lateral motion are separated by ∼1-5 meV for the example considered, with a 0.4 μm gate opening. © 1987.
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
Eloisa Bentivegna
Big Data 2022
P. Alnot, D.J. Auerbach, et al.
Surface Science
J.R. Thompson, Yang Ren Sun, et al.
Physica A: Statistical Mechanics and its Applications