Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology
Self-consistent solutions for quasi-one-dimensional electron states in a narrow inversion layer channel at a GaAs/AlGaAs heterointerface have been obtained for a structure with a split gate. A simple model for fixed charge at the exposed surface in the gate opening has been used in the calculation. Energy levels for lateral motion are separated by ∼1-5 meV for the example considered, with a 0.4 μm gate opening. © 1987.
T.N. Morgan
Semiconductor Science and Technology
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Proceedings of SPIE 1989
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