Simulation study of Ge n-channel 7.5 nm DGFETs of arbitrary crystallographic alignmentS.E. Laux2004IEDM 2004
Simulation of quantum electronic transport in small devices: A Master equation approachM.V. FischettiS.E. Lauxet al.2003IEDM 2003
QDAME simulation of 7.5 nm double-gate Si nFETs with differing access geometriesS.E. LauxA. Kumaret al.2002IEDM 2002
Monte Carlo study of velocity overshoot in switching a 0.1-micron CMOS inverterS.E. LauxM.V. Fischetti1997IEDM 1997
Monte Carlo study of sub-band-gap impact ionization in small silicon field-effect transistorsM.V. FischettiS.E. Laux1995IEDM 1995
Monte carlo study of electron transport in silicon inversion layersM.V. FischettiS.E. Laux1992IEDM 1992
Monte Carlo simulation of a 30 nm dual-gate MOSFET: How short can Si go?D.J. FrankS.E. Lauxet al.1992IEDM 1992