Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
The chemical vapor deposition (CVD) of Si from SiH4 is a complex process involving both gas phase and surface reactions. During CVD, surface silicon hydrides [SiHx(a)] are formed and ultimately decompose to form a Si film. We have investigated the surface decomposition kinetics of SiH3(a), SiH2(a), and SiH(a), formed following the adsorption of atomic hydrogen on Si(lll)-(7x7) and Si(100)-(2X 1), using static secondary ion mass spectrometry (SSIMS) and temperature programmed desorption (TPD). The kinetic parameters for the decomposition ofSiH3(a) are reported for the first time. The decomposition kinetics of SiH2(a) and SiH(a) as measured by SSIMS agree well with previous TPD and isothermal desorption measurements. Correlations between the surface decomposition of SiHx species and the activation energies measured for Si film growth, as well as comparisons with silicon hydride species formed from the adsorption of silanes will be discussed. © 1989, American Vacuum Society. All rights reserved.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Gregory Czap, Kyungju Noh, et al.
APS Global Physics Summit 2025