Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology
Three different manufacturable alumina etch processes were developed for 175/175 and 150/150 nm line/space structures. It was shown that the reactive ion etching (RIE) process can clear a sub-100 nm space for metal stacks having a height of 435 nm. This indicates that aluminum RIE can be extended for even smaller structures without requiring a new generation of the tool set.
T.N. Morgan
Semiconductor Science and Technology
Shiyi Chen, Daniel Martínez, et al.
Physics of Fluids
J.K. Gimzewski, T.A. Jung, et al.
Surface Science
O.F. Schirmer, K.W. Blazey, et al.
Physical Review B