Conference paper
Soft x-ray diffraction of striated muscle
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
Recent selective oxide etching results obtained with an electron cyclotron resonance high-density plasma reactor are presented. Reactive ion etching lag results of patterned SiG2 samples etched with various fluorocarbon gases are discussed. A reactive ion etching lag mechanism which is based on the dependence of the oxide etch rate on if power is proposed. © 1994, American Vacuum Society. All rights reserved.
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
Lawrence Suchow, Norman R. Stemple
JES
A. Krol, C.J. Sher, et al.
Surface Science
R.W. Gammon, E. Courtens, et al.
Physical Review B