L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
Recent selective oxide etching results obtained with an electron cyclotron resonance high-density plasma reactor are presented. Reactive ion etching lag results of patterned SiG2 samples etched with various fluorocarbon gases are discussed. A reactive ion etching lag mechanism which is based on the dependence of the oxide etch rate on if power is proposed. © 1994, American Vacuum Society. All rights reserved.
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings