Fluorocarbon high density plasma. VI. Reactive ion etching lag model for contact hole silicon dioxide etching in an electron cyclotron resonance plasma
- M. Surendra
- 1994
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
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Reactive ion etching lag investigation of oxide etching in fluorocarbon electron cyclotron resonance plasmas
- O. Joubert
- G.S. Oehrlein
- et al.
- 1994
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films