R.M. Feenstra, M.A. Lutz, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Scanning tunneling microscopy is used to confirm the -bonded chain structure of the Si(111)2×1 surface. Both the amplitude and voltage dependence of the vertical corrugation exclude the buckling model for the structure of this surface. Spectroscopic measurements of the tunneling current versus voltage identify a band gap for the 2×1 surface states. Spatial images of disorder-related states are obtained by tunneling at energies inside of this band gap. © 1986 The American Physical Society.
R.M. Feenstra, M.A. Lutz, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
R.M. Feenstra, J. Woodall, et al.
Physical Review Letters
M.R. Melloch, J. Woodall, et al.
Annual Review of Materials Science
W.A. Thompson, S. Von Molnar
Journal of Applied Physics