Learning Reduced Order Dynamics via Geometric Representations
Imran Nasim, Melanie Weber
SCML 2024
Scanning tunneling microscopy of Sn overlayers on the GaAs(110) surface shows patterns with local order of nominal (3×3) periodicity and an absence of long-range order. Using first-principles calculations, we show that these observations can be explained in terms of a double-layer structure which consists of a complete (1×1) Sn layer covered by Sn adatoms. This structure results from a subtle balance between electronic energy and lattice strain. Spectroscopic studies indicate that this Sn overlayer exhibits a narrow gap (<0.2 eV) centered in the gap region of the GaAs substrate. © 1989 The American Physical Society.
Imran Nasim, Melanie Weber
SCML 2024
T.N. Morgan
Semiconductor Science and Technology
E. Burstein
Ferroelectrics
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989