Oliver Schilter, Alain Vaucher, et al.
Digital Discovery
Scanning tunneling microscopy of Sn overlayers on the GaAs(110) surface shows patterns with local order of nominal (3×3) periodicity and an absence of long-range order. Using first-principles calculations, we show that these observations can be explained in terms of a double-layer structure which consists of a complete (1×1) Sn layer covered by Sn adatoms. This structure results from a subtle balance between electronic energy and lattice strain. Spectroscopic studies indicate that this Sn overlayer exhibits a narrow gap (<0.2 eV) centered in the gap region of the GaAs substrate. © 1989 The American Physical Society.
Oliver Schilter, Alain Vaucher, et al.
Digital Discovery
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
P.C. Pattnaik, D.M. Newns
Physical Review B