J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
Scanning tunneling microscopy of Sn overlayers on the GaAs(110) surface shows patterns with local order of nominal (3×3) periodicity and an absence of long-range order. Using first-principles calculations, we show that these observations can be explained in terms of a double-layer structure which consists of a complete (1×1) Sn layer covered by Sn adatoms. This structure results from a subtle balance between electronic energy and lattice strain. Spectroscopic studies indicate that this Sn overlayer exhibits a narrow gap (<0.2 eV) centered in the gap region of the GaAs substrate. © 1989 The American Physical Society.
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
M.A. Lutz, R.M. Feenstra, et al.
Surface Science
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Polyhedron