O.F. Schirmer, K.W. Blazey, et al.
Physical Review B
Paper
Reduced hot-carrier reliability degradation of x-ray irradiated MOSFETs in a 0.25 μm CMOS technology with ultra-thin gate oxide
Abstract
No abstract available.
Related
J. Tersoff
Applied Surface Science
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000