Masamitsu Hayashi, Luc Thomas, et al.
Physical Review Letters
The spin torque switching current density is measured for magnetic tunnel junctions containing a CoFeB free layer. We find that the insertion of an ultra-thin boron layer near the free layer/tunnel barrier interface gives rise to an increased resistance-area product and to a reduction in the switching current density. This is attributed to a lower tunneling matrix element near the inserted boron. As a result, the injected current is concentrated within smaller areas of the free layer, which leads to an overall decrease in the switching current density. © 2012 American Institute of Physics.
Masamitsu Hayashi, Luc Thomas, et al.
Physical Review Letters
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Physical Review Letters
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Applied Physics Letters
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ACS Nano