T.-C. Chiang, D.E. Eastman, et al.
Physical Review Letters
We report new evidence that intrinsic surface states play a predominant role in determining Schottky-barrier energies for III-V semiconductors. Namely, empty surfacestate levels have been measured (using photoelectron yield spectroscopy) for (110) GaSb, GaAs, GaP, InSb, and InAs whose one-electron energies correlate with Schottky-barrier energies reported by Mead and Spitzer. Also, these sharp molecularlike surface states are shown to be insensitive to metal overlayers and to be cation derived. © 1975 The American Physical Society.
T.-C. Chiang, D.E. Eastman, et al.
Physical Review Letters
J.F. van der Veen, F.J. Himpsel, et al.
Solid State Communications
J.F. Van Der Veen, F.J. Himpsel, et al.
Physical Review B
P.O. Nilsson, G. Arbman, et al.
Solid State Communications